Betavoltaic battery with a shallow junction and a method for making same
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United States of America Patent
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Aug 12, 2014
Grant Date -
Jun 14, 2012
app pub date -
Feb 14, 2012
filing date -
Oct 10, 2009
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Abstract
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.
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