Solar cell and process for producing the same
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United States of America Patent
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Aug 12, 2014
Grant Date -
Oct 14, 2010
app pub date -
Jun 22, 2010
filing date -
Feb 19, 2007
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Abstract
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
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