RF and milimeter-wave high-power semiconductor device
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United States of America Patent
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Aug 5, 2014
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app pub date -
Aug 12, 2010
filing date -
Aug 12, 2009
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Abstract
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
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