Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces

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United States of America Patent

PATENT NO 8793116
APP PUB NO 20120232855A1
SERIAL NO

13474846

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Abstract

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A method for designing a first vertical MOS power transistor having a specified design power level. The method comprises the steps of composing a layout of the vertical MOS power transistor as a combination of at least partly differing layout part pieces, each of the part pieces having known design data, the part pieces including at least one first layout part piece comprising a given number of single transistor cells, and adjusting the specified design power level of the first vertical MOS power transistor by using the known design data of the part pieces and based on the layout combination of the part pieces.

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Patent Owner(s)

Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES AG99097 ERFURT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lerner, Ralf Erfurt, DE 38 155
Miesch, Wolfgang Frankfurt, DE 4 17

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