Optimized channel implant for a semiconductor device and method of forming the same
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United States of America Patent
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Jul 22, 2014
Grant Date -
Aug 23, 2012
app pub date -
Feb 17, 2011
filing date -
Feb 17, 2011
priority date (Note) -
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Abstract
A semiconductor device, comprising a substrate, a plurality of polysilicon portions formed on the substrate, wherein the polysilicon portions are spaced apart from each other, a plurality of source/drain regions formed in the substrate between adjacent polysilicon portions, and a dielectric layer formed on the polysilicon portions and on the source/drain regions, wherein the dielectric layer includes a cavity filled with conductive material to form a contact area, the contact area overlapping part of a source/drain region and part of a polysilicon portion to electrically connect the polysilicon portion with the source/drain region, and wherein part of the contact area extends below an upper surface of the substrate to contact an implant region with the same doping as the source/drain region. The implant region is next to the source/drain region and includes part of a channel region in the substrate under the polysilicon portion.
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