Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
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United States of America Patent
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Jul 22, 2014
Grant Date -
Jan 3, 2013
app pub date -
Apr 15, 2011
filing date -
Apr 15, 2010
priority date (Note) -
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Abstract
A combined switching device includes a MOSFET disposed in a MOSFET area and IGBTs disposed in IGBT areas of a SiC substrate. The MOSFET and the IGBTs have gate electrodes respectively connected, a source electrode and emitter electrodes respectively connected, and a drain electrode and a collector electrode respectively connected. The MOSFET and the IGBTs are disposed with a common n-buffer layer. A top surface element structure of the MOSFET and top surface element structures of the IGBTs are disposed on the first principal surface side of the SiC substrate. Concave portions and convex portions are disposed on the second principal surface side of the SiC substrate. The MOSFET is disposed at a position corresponding to the convex portion of the SiC substrate. The IGBTs are disposed at positions corresponding to the concave portions of the SiC substrate.
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