Nanowire FET

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United States of America Patent

PATENT NO 8785996
APP PUB NO 20120038409A1
SERIAL NO

12856129

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Abstract

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An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.

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Patent Owner(s)

Patent OwnerAddress
NOKIA TECHNOLOGIES OYKARAKAARI 7 ESPOO 02610 FINLAND

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Colli, Alan Cambridgeshire, GB 29 180
White, Richard Huntingdon, GB 123 1117

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