Silicon carbide lamina
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United States of America Patent
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Jul 22, 2014
Grant Date -
Jan 30, 2014
app pub date -
Jul 26, 2012
filing date -
Jul 26, 2012
priority date (Note) -
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Abstract
A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.
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