Stress regulated semiconductor devices and associated methods
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United States of America Patent
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Jul 15, 2014
Grant Date -
Nov 8, 2012
app pub date -
Oct 29, 2011
filing date -
Sep 21, 2010
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Abstract
Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.
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