Compositions and methods for the selective removal of silicon nitride
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United States of America Patent
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Jul 15, 2014
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Jul 15, 2010
app pub date -
Dec 21, 2007
filing date -
Dec 21, 2006
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Abstract
Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
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