Composite semiconductor device
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United States of America Patent
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Jul 1, 2014
Grant Date -
Nov 22, 2012
app pub date -
Dec 28, 2010
filing date -
Jan 25, 2010
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Abstract
This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.
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