Method for forming low-carbon CVD film for filling trenches
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United States of America Patent
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Jul 1, 2014
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Jun 10, 2010
app pub date -
Dec 9, 2008
filing date -
Dec 9, 2008
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Abstract
A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
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