Method for patterning using phase-change material
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United States of America Patent
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Jul 1, 2014
Grant Date -
Jul 5, 2012
app pub date -
Mar 13, 2012
filing date -
Dec 13, 2007
priority date (Note) -
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Abstract
A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer.
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