Method of manufacturing a p-AlGaN layer

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United States of America Patent

PATENT NO 8765222
APP PUB NO 20120248387A1
SERIAL NO

13512747

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Abstract

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The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (01) and supplying the gas containing magnesium at a flow rate C1 (01) while supplying the Group III source gas at a flow rate A1 (0≦A1); and a second step of supplying a Group V source gas at a flow rate B2 (02) and supplying a gas containing magnesium at a flow rate C2 (02) while supplying a Group III source gas at a flow rate A2 (02). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0≦x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1≦0.5 A2.

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Patent Owner(s)

  • DOWA ELECTRONICS MATERIALS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuura, Tetsuya Tokyo, JP 51 395
Ooshika, Yoshikazu Tokyo, JP 9 75

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