Semiconductor light emitting device utilising punch-through effects
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United States of America Patent
Stats
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Jun 24, 2014
Grant Date -
Feb 10, 2011
app pub date -
Jan 21, 2009
filing date -
Jan 21, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).
First Claim
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International Classification(s)
- 2009 Application Filing Year
- H01L Class
- 14618 Applications Filed
- 11145 Patents Issued To-Date
- 76.25 % Issued To-Date
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 11 Age
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 24, 2025 |
