Ion implantation apparatus and ion implantation method
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United States of America Patent
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Jun 24, 2014
Grant Date -
Apr 18, 2013
app pub date -
Oct 16, 2012
filing date -
Oct 17, 2011
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Abstract
During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.
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