Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material
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United States of America Patent
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Jun 24, 2014
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Jan 5, 2012
app pub date -
Jun 23, 2011
filing date -
Jul 2, 2010
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Abstract
The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
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