Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
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United States of America Patent
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Jun 24, 2014
Grant Date -
May 22, 2014
app pub date -
Jan 24, 2014
filing date -
Apr 13, 2005
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Abstract
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
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