High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
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United States of America Patent
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Jun 17, 2014
Grant Date -
Mar 20, 2008
app pub date -
Jun 10, 2005
filing date -
Jun 11, 2004
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Abstract
The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs.
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