Apparatus for growing high quality silicon single crystal ingot and growing method using the same
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United States of America Patent
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Jun 17, 2014
Grant Date -
Feb 28, 2008
app pub date -
Jul 5, 2007
filing date -
Sep 21, 2005
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Abstract
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
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