Flash memory devices and methods for fabricating same
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United States of America Patent
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Jun 10, 2014
Grant Date -
Oct 24, 2013
app pub date -
Jun 18, 2013
filing date -
Dec 22, 2006
priority date (Note) -
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Abstract
Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.
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