Insulated gate bipolar transistor with high breakdown voltage
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United States of America Patent
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Jun 10, 2014
Grant Date -
Apr 18, 2013
app pub date -
Oct 15, 2012
filing date -
Oct 14, 2011
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Abstract
A semiconductor device includes a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, on the front of the semiconductor layer; a second semiconductor layer of the second conductor type, on the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer; a third semiconductor layer of the second conductor type, on the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer; a first semiconductor region of the first conductor type, in a surface layer of the third semiconductor layer; a second semiconductor region of the second conductor type, in a surface layer of the first semiconductor region; an input electrode contacting the second semiconductor region; a control electrode disposed above part of the first semiconductor region with an insulating film therebetween; and an output electrode disposed on the back of the semiconductor layer.
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