Patterning method

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United States of America Patent

PATENT NO 8748323
APP PUB NO 20100000969A1
SERIAL NO

12217645

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Abstract

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A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Shih-Ping Hsinchu, TW 31 312
Hsu, Han-Hui Hsinchu, TW 8 10
Wei, An-Chi Hsinchu, TW 41 164
Wu, Ming-Tsung Hsinchu, TW 14 80

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