METHOD OF MAKING MOSFET INTEGRATED WITH SCHOTTKY DIODE WITH SIMPLIFIED ONE-TIME TOP-CONTACT TRENCH ETCHING
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United States of America Patent
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Jun 10, 2014
Grant Date -
Jun 26, 2014
app pub date -
Dec 20, 2012
filing date -
Dec 20, 2012
priority date (Note) -
Granted
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Abstract
Method for fabricating MOSFET integrated with Schottky diode (MOSFET/SKY) is disclosed. Gate trench is formed in an epitaxial layer overlaying semiconductor substrate, gate material is deposited therein. Body, source, dielectric regions are successively formed upon epitaxial layer and the gate trench. Top contact trench (TCT) is etched with vertical side walls defining Schottky diode cross-sectional width SDCW through dielectric and source region defining source-contact depth (SCD); and partially into body region by total body-contact depth (TBCD). A heavily-doped embedded body implant region (EBIR) of body-contact depth (BCD)
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