Method of forming single-walled carbon nanotubes

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United States of America Patent

PATENT NO 8747799
APP PUB NO 20120171107A1
SERIAL NO

13381855

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Abstract

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The present invention relates to a method of forming single-walled carbon nanotubes. The method comprises contacting a gaseous carbon source with mesoporous TUD-1 silicate at suitable conditions. The mesoporous TUD-1 silicate comprises a metal of groups 3-13 of the Periodic Table of the Elements.

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Patent Owner(s)

Patent OwnerAddress
NANYANG TECHNOLOGICAL UNIVERSITYSINGAPORE 639798

International Classification(s)

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  • 2010 Application Filing Year
  • D01C Class
  • 10 Applications Filed
  • 10 Patents Issued To-Date
  • 100 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2010201120122013201420150255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yuan Singapore, SG 252 1626
Yang, Yanhui Singapore, SG 7 41

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  • 0 Citation Count
  • D01C Class
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  • 11 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1000.050.10.150.20.250.30.350.40.450.50.550.60.650.70.750.80.850.90.9511.05

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11.5 Year Payment $7400.00 $3700.00 $1850.00 Dec 10, 2025