Semiconductor memory, system, and method of operating semiconductor memory

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United States of America Patent

PATENT NO 8743649
APP PUB NO 20120327734A1
SERIAL NO

13485266

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Abstract

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A memory has memory cells in a matrix; a first selection unit selecting any of first signal lines in the memory cells, in response to an access request; a second selection unit selecting any of second signal lines in the memory cells, after the first selection unit starts operating; a first voltage generation unit generating a first power supply voltage supplied to the first selection unit; a second voltage generation unit generating a second power supply voltage supplied to the second selection unit, when a start-up signal is active; a switch short-circuiting first and second power supply lines, when a short-circuit signal is active; and a power supply voltage control unit which activates the start-up signal in response to the access request, activates the short-circuit signal after a predetermined time elapses since activation of the start-up signal, deactivates the short-circuit signal and the start-up signal after completion of access operations.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED3-9-1 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Takahiko Tachikawa, JP 74 457

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