III nitride epitaxial substrate and deep ultraviolet light emitting device using the same

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United States of America Patent

PATENT NO 8742396
APP PUB NO 20130181188A1
SERIAL NO

13739362

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A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate includes a substrate, an AlN buffer layer, a first superlattice laminate, a second superlattice laminate and a III nitride laminate in this order. The III nitride laminate includes an active layer including an AlαGa1-αN (0.03≦α) layer. The first superlattice laminate includes AlaGa1-aN layers and AlbGa1-bN (0.9xGa1-xN layer, an AlyGa1-yN layer, and an AlzGa1-zN (0.9

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Patent OwnerAddress
DOWA ELECTRONICS MATERIALS CO LTD4-14-1 SOTOKANDA CHIYODA-KU TOKYO 1010021 ?1010021

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Inventor Name Address # of filed Patents Total Citations
Ooshika, Yoshikazu Tokyo, JP 9 75

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