Silicate-based phosphor and manufacturing method of silicate-based phosphor

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United States of America Patent

PATENT NO 8734680
SERIAL NO

13640412

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There are provide a silicate-based phosphor excellent in emission intensity and a manufacturing method of the same. A manufacturing method of a silicate-based phosphor is characterized by: introducing in a vessel raw material powders having a compound containing light-emitting ions selected from at least one of Eu, Ce, Mn, and Tb; and firing the raw material powders while supplying SiOx (0.5≦x≦1.9, preferably, 0.8≦x≦1.2) in a gas phase. The raw material powders preferably further contains at least one of an alkali metal compound, an alkaline-earth metal compound, a magnesium compound, and a rare-earth compound. The silicate-based phosphor is preferably M2SiO4:Eu2+ (wherein M is one or more selected from a group consisting of Ca, Sr and Ba). The firing is preferably performed by supplying the SiOx to the raw material powders in a gas atmosphere at a temperature of 1200 to 1700° C. and subjecting the raw material powders to a gas-solid phase reaction at a temperature of 700 to 1700° C.

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Patent Owner(s)

Patent OwnerAddress
NIIGATA UNIVERSITYNIIGATA PREFECTURE IN JAPAN
LEAD CHEMICAL COMPANY LIMITED2-12 NIHONBASHI-HONGOKUCHO 3-CHOME CHUO-KU TOKYO 1030021

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishigaki, Tadashi Niigata, JP 8 25
Kudo, Yoshiaki Tokyo, JP 21 380
Minegishi, Etsuko Tokyo, JP 1 0
Sato, Mineo Niigata, JP 14 53
Suda, Hideo Tokyo, JP 11 167
Toda, Kenji Niigata, JP 35 383
Uematsu, Kazuyoshi Niigata, JP 11 7

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