Quantum dot-fullerene junction optoelectronic devices
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United States of America Patent
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May 20, 2014
Grant Date -
Sep 27, 2012
app pub date -
Sep 29, 2010
filing date -
Sep 29, 2009
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Abstract
An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit increased charge carrier mobility.
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