Method of plasma activated deposition of a conformal film on a substrate surface

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United States of America Patent

PATENT NO 8728955
APP PUB NO 20130210241A1
SERIAL NO

13409212

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Abstract

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A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

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Patent Owner(s)

Patent OwnerAddress
NOVELLUS SYSTEMS INC4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Konjolia, Ravi North Andover, US 2 72
LaVoie, Adrien Portland, US 198 18204
Moser, Daniel Manitowoc, US 25 927
Odedra, Rajesh Cheshire, GB 25 1788
Saly, Mark J North Andover, US 20 568

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