Method for producing monocrystalline N-silicon solar cells, as well as a solar cell produced according to such a method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 20, 2014
Grant Date -
Feb 24, 2011
app pub date -
Feb 11, 2009
filing date -
Feb 15, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully