Single crystal heat treatment method

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United States of America Patent

PATENT NO 8728232
APP PUB NO 20060266277A1
SERIAL NO

11374436

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Abstract

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A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below

description='In-line Formulae' end='lead'800≦T1<(Tm1−550)  (3)description='In-line Formulae' end='tail'

    (wherein Tm1 (units: ° C.) represents the melting point of the single crystal).

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Patent Owner(s)

Patent OwnerAddress
OXIDE CORPORATION1747-1 MAKIHARA MUKAWA-CHO HOKUTO-SHI YAMANASHI 4080302

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurashige, Kazuhisa Hitachinaka, JP 16 201
Kurata, Yasushi Hitachinaka, JP 64 744
Shimura, Naoaki Hitachinaka, JP 16 202
Usui, Tatsuya Hitachinaka, JP 14 194

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