Method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch
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United States of America Patent
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May 13, 2014
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Jun 2, 2009
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Jun 9, 2008
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Abstract
An embodiment of the present inventions provides a method for preconditioning a semiconductor fabrication component using a plasma etching process and an optional enhanced ultrasonic and/or megasonic preconditioning step in order to eliminate the need for a burn-in period typically associated with said components, as well as extend the useful life of the component during its wear-out phase.
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