Nonvolatile memory cell and method of manufacturing the same
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United States of America Patent
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May 6, 2014
Grant Date -
Jan 9, 2014
app pub date -
Sep 10, 2013
filing date -
Aug 25, 2009
priority date (Note) -
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Abstract
Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
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