Laser-irradiated thin films having variable thickness

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United States of America Patent

PATENT NO 8715412
SERIAL NO

13740664

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Abstract

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Systems for processing thin films having variable thickness are provided. A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

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Patent Owner(s)

Patent OwnerAddress
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORKNEW YORK NY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Im, James S New York, US 82 2465

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