Method and system for utilizing Perovskite material for charge storage and as a dielectric

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United States of America Patent

PATENT NO 8709891
APP PUB NO 20130279236A1
SERIAL NO

13918537

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Abstract

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Memory devices and methods for providing the memory devices are provided. The memory devices utilize multiple metal oxide layers. The methods for providing the memory devices can include providing a transistor; producing a capacitor that includes metal layers and metal oxide layers; connecting the capacitor to a side of the transistor; and providing a wordline, bitline, and driveline through connection with the transistor or the capacitor.

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Patent Owner(s)

Patent OwnerAddress
4D-S LTDC/- GROUND FLOOR BGC CENTRE 28 THE ESPLANADE PERTH 6000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dongmin Fremont, US 58 619
Lan, Zhida San Jose, US 26 258

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