Method for forming a back-side illuminated image sensor

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United States of America Patent

PATENT NO 8704282
APP PUB NO 20120261732A1
SERIAL NO

13445013

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Abstract

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A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS S A29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120
STMICROELECTRONICS (CROLLES) SAS850 RUE JEAN MONNET F-38920 CROLLES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Marty, Michel Saint Paul de Varces, FR 72 848
Prima, Jens Siegen, DE 20 112
Roy, François Seyssins, FR 48 618

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