Method of manufacturing of a semi-conductor element and semi-conductor element

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United States of America Patent

PATENT NO 8703587
APP PUB NO 20130015426A1
SERIAL NO

13549391

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Abstract

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A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid.

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Patent Owner(s)

Patent OwnerAddress
TECHNISCHE UNIVERSITAET BRAUNSCHWEIG CAROLO-WILHELMINAPOCKELSSTR 14 38106 BRAUNSCHWEIG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Shunfeng Braunschweig, DE 1 7
Waag, Andreas Braunschweig, DE 14 102
Wang, Xue Braunschwieg, DE 100 456

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