Method of manufacturing semiconductor device
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United States of America Patent
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Apr 22, 2014
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N/A
app pub date -
Jul 20, 2011
filing date -
Jul 28, 2006
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Abstract
A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
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