Power MOSFET contact metallization
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 15, 2014
Issued Date -
N/A
app pub date -
Oct 17, 2012
filing date -
May 12, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully