Method for writing and reading data in an electrically erasable and programmable nonvolatile memory
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United States of America Patent
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Apr 8, 2014
Grant Date -
Apr 29, 2010
app pub date -
Oct 22, 2009
filing date -
Oct 23, 2008
priority date (Note) -
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Abstract
A method for writing and reading data in a main nonvolatile memory having target pages in which data are to be written and read, the method including providing a nonvolatile buffer having an erased area, providing a volatile cache memory, and receiving a write command to update a target page with updating data the length of which can be lower than the length of a page. The method also includes, in response to the write command, writing the updating data into the erased area of the nonvolatile buffer, together with management data of a first type, and recording an updated version of the target page in the cache memory or updating in the cache memory a previously updated version of the target page.

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- 15 United States
- 10 France
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- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
STMICROELECTRONICS NV | WTC SCHIPHOL AIRPORT SCHIPHOL BOULEVARD 265 BH LUFTHAVEN SCHIPOL AMSTERDAM 1118 | |
STMICROELECTRONICS DESIGN AND APPLICATION GMBH | WERNER-VON-SIEMENS RING 3-5 GRASSBRUNN 85630 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Bildgen, Marco | Habere Poche, FR | 14 | 81 |
Boehler, Juergen | Munich, DE | 10 | 57 |
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11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Oct 8, 2025 |
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Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
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