Wafer level applied thermal heat sink
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United States of America Patent
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Apr 1, 2014
Grant Date -
Apr 11, 2013
app pub date -
Oct 4, 2012
filing date -
Oct 5, 2011
priority date (Note) -
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Abstract
A process for forming a heat sink on a semiconductor package at the wafer level stage of manufacture is disclosed. A semiconductor component wafer, prior to separation into separate component packages, is covered on one side with a resin metal foil layer. The resin foil layer is patterned by laser ablation to define the heat sink locations, and then a thermal paste is applied over the patterned layer. The thermal conductive paste is hardened to form the heat sinks. The wafer can then be separated into packages.
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