Semiconductor device, integrated circuit including the semiconductor device, control IC for switching power supply and the switching power supply
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United States of America Patent
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Mar 25, 2014
Grant Date -
Dec 31, 2009
app pub date -
Aug 4, 2009
filing date -
Nov 20, 2006
priority date (Note) -
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Abstract
A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element.
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