Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
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Mar 25, 2014
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Apr 7, 2009
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May 28, 1996
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Abstract
A device on a supporting substrate is provided including a semiconductor film, having two or more rectangular crystalline regions spaced from each other, wherein each of the two or more rectangular crystalline regions comprises one single crystal region. The device can further include two or more thin-film transistors, wherein each of the two or more thin-film transistors comprises one or more active-channel regions. Each of the one or more active-channel regions can comprise at least one of said two or more rectangular crystalline regions. The device can further include an integrated circuit which comprises of the two or more thin-film transistors.
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