Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure
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United States of America Patent
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Mar 25, 2014
Grant Date -
Sep 5, 2013
app pub date -
Apr 9, 2013
filing date -
Apr 14, 2011
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Abstract
Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.
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