Vapor phase epitaxy apparatus of group III nitride semiconductor
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United States of America Patent
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Mar 25, 2014
Grant Date -
Jul 28, 2011
app pub date -
Jan 26, 2011
filing date -
Jan 26, 2010
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Abstract
[Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.
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