Method of tailoring conformality of Si-containing film
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United States of America Patent
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Mar 11, 2014
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Feb 2, 2012
app pub date -
Jul 30, 2010
filing date -
Jul 30, 2010
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Abstract
A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
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