Electronic device with a gate electrode having at least two portions

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8659087
APP PUB NO 20100090287A1
SERIAL NO

12639394

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Abstract

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A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD17TH FLOOR JINSONG MANSION TERRA INDUSTRIAL & TRADE PARK FUTIAN SHENZHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adetutu, Olubunmi O Austin, US 58 1906
Luo, Tien Ying Austin, US 20 262
Ramani, Narayanan C Austin, US 6 71

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