Solution composition for forming oxide thin film and electronic device including the oxide thin film
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United States of America Patent
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Feb 25, 2014
Grant Date -
Feb 14, 2013
app pub date -
Oct 12, 2012
filing date -
Apr 9, 2009
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Abstract
A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
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