Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal

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United States of America Patent

PATENT NO 8657955
APP PUB NO 20090293805A1
SERIAL NO

12462429

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Abstract

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It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

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Patent Owner(s)

Patent OwnerAddress
TOYODA GOSEI CO LTDAICHI PREFECTURE JAPAN AICHI
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-SHI AICHI 4678530 ?4678530
OSAKA UNIVERSITY1-1 YAMADAOKA SUITA-SHI OSAKA 5650871 ?5650871

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwai, Makoto Kasugai, JP 118 504
Kawamura, Fumio Suita, JP 87 965
Mori, Yusuke Suita, JP 205 925
Sasaki, Takatomo Suita, JP 64 492
Shimodaira, Takanao Nagoya, JP 28 74
Yamamura, Yoshihiko Nagoya, JP 19 158
Yamasaki, Shiro Nishikasugai-Gun, JP 23 441

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